Product description
Overview
The ABB 3BHE009681R0101 3BHB012961R0001 5SHX2645L0002 is an advanced Insulated Gate Bipolar Transistor (IGBT) module designed to deliver high power efficiency and reliability across a broad spectrum of industrial applications. Combining two IGBTs and a diode within a single compact package, it offers an optimal solution for demanding power management needs.
Features
• High voltage and current handling capability: Capable of handling up to 650 V voltage and 2645 A current, ensuring robust performance in high-power applications.
• Fast switching speeds: Enables rapid switching operations, essential for applications requiring dynamic control.
• Low losses: Efficient operation with minimized energy losses, contributing to overall system efficiency.
• High reliability: Engineered for long-term reliability under demanding operational conditions.
• Integrated gate driver: Includes an integrated gate driver circuit, simplifying installation and enhancing system performance.
• Space-saving design: Compact form factor optimizes space utilization within control systems and cabinets.
• Unwavering reliability: Designed to maintain consistent performance and durability over its operational lifespan.
Technical Specifications
• Rated voltage: 650 V
• Rated current: 2645 A
• Rated frequency: 50/60 Hz
• Turn-off time: 60 μs
• Reverse recovery time: 50 μs
• Insulation voltage: 1000 V
• Operating temperature: -40°C to +85°C
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