AMAT 8116071G001 On-board 8F Three-phase Integrated Low-temperature Condensing Pump

AMAT 8116071G001 On-board 8F Three-phase Integrated Low-temperature Condensing Pump
I. Basic Product Ownership Information
Full model number: 8116071G001
Original brand manufacturer: CTI-Cryogenics (a leading company in cryogenic pumps, purchased by AMAT for complete machine integration)
Ownership of the complete machine: Applied Materials (AMAT – Applied Materials)
Full name definition: Enhanced On-Board 8F Three-phase Integrated Low-temperature Condensing Pump (Cryopump)
AMAT equipment compatibility platform: ENDURA series PVD physical vapor deposition coating machine (core vacuum component of semiconductor wafer sputtering equipment)

Model Segmentation Explanation
8116071G001: CTI original material code, AMAT complete machine inventory spare part number
ON-BOARD: Integrated onboard structure (pump body + drive control board integrated as one, no need for an external control cabinet)
8F: Standard cold pump cavity specification of 8-inch diameter
Enhanced / 3PH: Three-phase 380V power supply enhanced firmware hardware, optimized argon and nitrogen pumping efficiency, longer regeneration cycle, dedicated upgrade version for semiconductor mass production high-frequency startup conditions

 Core Performance and Vacuum Parameters (Standard for Semiconductor Process)
1. Pumping Speed Capability (Normal Temperature Gas)
Nitrogen (N₂) pumping speed: ≈ 1700 L/s
Argon (Ar) pumping speed: ≈ 1450 L/s (PVD sputtering main process gas)
Hydrogen (H₂) pumping speed: ≈ 480 L/s
2. Ultimate Vacuum
No-load ultimate vacuum: ≤ 1×10⁻⁸ Torr
Process working vacuum range: 10⁻⁶ ~ 10⁻⁷ Torr (satisfying metal, titanium nitride, aluminum-copper film sputtering process)
3. Refrigeration Core Parameters
Refrigeration machine type: Two-stage Stirling cycle refrigeration machine
First-stage cold head temperature: ~ 65K; Second-stage adsorption screen temperature: ~ 10K
Full-load cooling time: reaches the process-usable low temperature range within 60 minutes after startup

Electrical and Hardware Specifications
Power supply system: Three-phase 3Φ 208VAC / 380VAC 50/60Hz industrial power supply
Overall power consumption: rated operation 1350W; startup peak 1800W
Integrated onboard functions (On-Board integrated advantages)
Built-in main control drive circuit board: pump speed control, temperature monitoring, vacuum pressure collection
Automatic regeneration program: automatically heats up and desorbs gas after adsorption saturation, no need for manual intervention
Fault self-check: over-temperature, overload, refrigerant leakage, communication abnormality alarm output
Serial port / bus communication: connects to ENDURA equipment main control system, uploads operation sequence, fault code, cumulative working time
Structure and environment
Installation: vertical flange connection to the vacuum chamber, suitable for clean room Class 1 environment
Working temperature: 18~26℃ (semiconductor workshop constant temperature environment)
Net weight: approximately 42kg
Standard accessories: vacuum flange, bellows, pressure relief valve, temperature and pressure sensor complete set

 Core Advantages (Features of Enhanced 8F Version)
Optimized adsorption material: significantly improved argon retention capacity, reduced regeneration frequency by 30%, reducing equipment downtime and maintenance time
Seismic and vibration reinforcement design: suitable for 24-hour continuous production conditions of wafer machines
Integrated onboard structure: saves cabinet space, simplified wiring, lower electromagnetic interference
Full-state timing record: can export operation hours, regeneration times, fault logs, facilitating equipment preventive maintenance

 Semiconductor Standard Application Scenarios
Only equipped with AMAT ENDURA PVD sputtering platform:
Logic chip, storage chip wafer metal layer deposition
Copper interconnection, barrier layer, passivation film sputtering coating
Flat panel display, power semiconductor wafer coating production line main vacuum acquisition equipment